Name: IPB036N12N3GATMA1
Brand: Infineon Technologies
SKU: IPB036N12N3GATMA1
Price: 7.32000 USD
Availability: InStock

new-10%

IPB036N12N3GATMA1

Manufacturer part number:IPB036N12N3GATMA1

Manufacturer:Infineon Technologies

Description:IPB036N12N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPB036N12N3GATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 270μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	13800pF @ 60V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	211nC @ 10V
Rise Time	52ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	76 ns
Continuous Drain Current (ID)	180A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	120V
Drain-source On Resistance-Max	0.0036Ohm
Drain to Source Breakdown Voltage	120V
Avalanche Energy Rating (Eas)	900 mJ
Max Junction Temperature (Tj)	175°C
Height	4.5mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

IPB036N12N3GATMA1 Product Details

IPB036N12N3GATMA1 Description

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products. The manufacturer of IPB036N12N3GATMA1 is Siemens Semiconductors.