FDB8441 Description
The N-channel MOSFETFDB8441 is manufactured using on Semiconductor's advanced POWERTRENCH process, which is tailor-made to minimize ON-state resistance while maintaining excellent switching performance.
FDB8441 Features
Typ rDS(on) = 1.9mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 215nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
FDB8441 Applications
This product is general usage and suitable for many different applications.
