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FQA16N50

FQA16N50

FQA16N50

ON Semiconductor

FQA16N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQA16N50 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 200W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 320mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:2234 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.87000$3.87
500$3.8313$1915.65
1000$3.7926$3792.6
1500$3.7539$5630.85
2000$3.7152$7430.4
2500$3.6765$9191.25

FQA16N50 Product Details

FQA16N50 Description


Using Fairchild's unique planar stripe, DMOS technology, power field effect transistors with the FQA16N50 N-Channel enhancement mode are created.

In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These gadgets are ideal for power factor correction, electronic lamp ballasts based on half-brides, and high efficiency switch mode power supplies.



FQA16N50 Features


  • Fast switching

  • Low Crss(typical 35 pF)

  • 100% avalanche tested

  • Improved dv/dt capability

  • Low gate charge(typical 60 nC)

  • 16A. 500V Ros(on)=32|[email protected]=10V



FQA16N50 Applications


  • Industrial

  • Automotive

  • Enterprise systems


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