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PMG370XN,115

PMG370XN,115

PMG370XN,115

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 440m Ω @ 200mA, 4.5V ±12V 37pF @ 25V 0.65nC @ 4.5V 30V 6-TSSOP, SC-88, SOT-363

SOT-23

PMG370XN,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1997
Series TrenchMOS™
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count6
JESD-30 Code R-PDSO-G6
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 690mW Tc
Operating ModeENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 440m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 37pF @ 25V
Current - Continuous Drain (Id) @ 25°C 960mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.65nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 0.96A
Drain-source On Resistance-Max 0.44Ohm
DS Breakdown Voltage-Min 30V
RoHS StatusROHS3 Compliant
In-Stock:102672 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.08000$0.08
500$0.0792$39.6
1000$0.0784$78.4
1500$0.0776$116.4
2000$0.0768$153.6
2500$0.076$190

PMG370XN,115 Product Details

PMG370XN,115 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 37pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 0.96A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).

PMG370XN,115 Features


a 30V drain to source voltage (Vdss)


PMG370XN,115 Applications


There are a lot of NXP USA Inc.
PMG370XN,115 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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