Name: FDB0260N1007L
Brand: ON Semiconductor
SKU: FDB0260N1007L
Price: 6.56000 USD
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins	7
Weight	1.312g
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max	3.8W Ta 250W Tc
Element Configuration	Single
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.6m Ω @ 27A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8545pF @ 50V
Current - Continuous Drain (Id) @ 25°C	200A Tc
Gate Charge (Qg) (Max) @ Vgs	118nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	200A
Threshold Voltage	2.8V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

FDB0260N1007L Product Details

FDB0260N1007L MOSFET Description

The FDB0260N1007L N-Channel MOSFET is of high performance and current handling capability. It can do fast switching for load-switch devices. This N-Channel MOSFET is produced using an advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.