FMG1G100US60L Description
Insulated Gate Bipolar Transistor (IGBT) power modules from On Semiconductor offer minimal conduction and switching losses in addition to durability against short circuits. FMG1G100US60L was made for uses where short circuit ruggedness is necessary, such as motor control, uninterrupted power supply (UPS), and general inverters.
FMG1G100US60L Features
High Speed Switching
High Input Impedance
UL Certified No. E209204
Fast & Soft Anti-Parallel FWD
Short Circuit rated 10us @ TC = 100°C, VGE = 15V
Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 100A
FMG1G100US60L Application