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FJN598JABU

FJN598JABU

FJN598JABU

ON Semiconductor

FJN598JABU datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

FJN598JABU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature150°C TJ
PackagingBulk
Published 2002
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number FJN598
Power - Max 150mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 5V
Current - Drain (Idss) @ Vds (Vgs=0) 100μA @ 5V
Voltage - Cutoff (VGS off) @ Id 600mV @ 1μA
Voltage - Breakdown (V(BR)GSS) 20V
Current Drain (Id) - Max 1mA
In-Stock:2100 items

FJN598JABU Product Details

FJN598JABU Description

FJN598JABU transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FJN598JABU MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor FJN598JABU has the common source configuration.

FJN598JABU Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FJN598JABU Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts


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