FGY75T120SQDN Description
The Ultra Field Stop Trench structure of this Insulated Gate Bipolar Transistor (IGBT) ensures outstanding performance in demanding switching applications, with low on-state voltage and little switching loss. The IGBT is ideal for solar and UPS applications. A soft and fast co-packaged free wheeling diode with a low forward voltage is included in the device.
FGY75T120SQDN Features
? Field Stop Technology for Extremely Efficient Trenching
? TJ = 175°C Maximum Junction Temperature
VCE(sat) = 1.7 V (Typ.) @ IC = 75 A
? ILM was tested on 100% of the parts (1)
? Diode with a Soft Fast Reverse Recovery
? High-speed switching optimized
? Compliant with RoHS
FGY75T120SQDN Applications
? Solar Inverter, UPS
