STGWA60V60DWFAG datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGWA60V60DWFAG Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~175°C TJ
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
375W
Reverse Recovery Time
200ns
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
80A
Test Condition
400V, 60A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 60A
IGBT Type
Trench Field Stop
Gate Charge
314nC
Current - Collector Pulsed (Icm)
240A
Td (on/off) @ 25°C
35ns/190ns
Switching Energy
1.02mJ (on), 370μJ (off)
RoHS Status
ROHS3 Compliant
In-Stock:688 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$13.39000
$13.39
500
$13.2561
$6628.05
1000
$13.1222
$13122.2
1500
$12.9883
$19482.45
2000
$12.8544
$25708.8
2500
$12.7205
$31801.25
STGWA60V60DWFAG Product Details
STGWA60V60DWFAG Description
The STGWA60V60DWFAG is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters.
STGWA60V60DWFAG Features
AEC-Q101 qualified
Maximum junction temperature: TJ = 175 °C
VCE(sat) = 1.85 V (typ.) @ IC = 60 A
Tail-less switching current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Silicon carbide diode with no-reverse recovery charge is co-packaged in a freewheeling configuration
STGWA60V60DWFAG Applications
Automotive converters
Totem-pole power factor correction
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