SGB02N120ATMA1 Description
IGBT (insulated gate bipolar transistor) provides a high switching speed necessary for PWM VFD operation. IGBTs are capable of switching on and off several thousand times a second. A VFD IGBT can turn on in less than 400 nanoseconds and off in approximately 500 nanoseconds.
SGB02N120ATMA1 Features
? Lower Eoff compared to previous generation
? Short circuit withstand time – 10 μs
? Designed for:
- Motor controls
- Inverter
- SMPS
? NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
? Qualified according to JEDEC1
for target applications
? Pb-free lead plating; RoHS compliant
SGB02N120ATMA1 Applications
Desktop PC power supplies for
Next-generation AMD processors
Voltage regulator modules (VRM)
