FGAF40S65AQ datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGAF40S65AQ Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Operating Temperature
-55°C~175°C TJ
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Terminal Finish
Tin (Sn)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
94W
Reverse Recovery Time
274ns
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
80A
Test Condition
400V, 10A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
75nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
17.8ns/81.6ns
Switching Energy
132μJ (on), 62μJ (off)
In-Stock:1546 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.56000
$3.56
30
$2.49033
$74.7099
120
$2.13442
$256.1304
510
$1.71941
$876.8991
FGAF40S65AQ Product Details
FGAF40S65AQ Description
FGAF40S65AQ IGBT is based on a new planar technology concept to yield an IGBT with tighter variation of switching energy versus temperature. IGBT FGAF40S65AQ denotes a subset of products tailored to high switching frequency operation over 100 kHz. ON Semiconductor FGAF40S65AQ is used in Consumer Appliances, PFC, Welder, Industrial application.
FGAF40S65AQ Features
Maximum junction temperature : TJ = 175°C Positive temperaure co-efficient for easy parallel operating High current capability Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A High input impedance 100% of the Parts tested for ILM Fast switching
