IKY50N120CH3XKSA1 Description
IKY50N120CH3XKSA1 is a 1200v low switching loss IGBT in Highspeed3 technology co-packed with a soft, fast recovery full current rated anti-parallel Emitter Controlled diode. The Infineon IKY50N120CH3XKSA1 can be applied in industrial UPS, charger, energy storage, and three-level solar string inverter applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IKY50N120CH3XKSA1 is in the PG-TO247-4-2 package with 652W power dissipation.
IKY50N120CH3XKSA1 Features
Ultra-low loss switching losses thanks to Kelvin emitter pin package in combination with High-speed H3 technology
High efficiency in hard switching and resonant topologies
10μsec short circuit withstands time at Tv=175°C.
Easy paralleling capability due to positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge Qc
Very soft, fast recovery full current anti-parallel diode
Maximum junction temperature 175°C.
Pb-free lead plating; RoHS compliant
IKY50N120CH3XKSA1 Applications
Industrial UPS
Charger
Energy Storage
Three-level Solar String Inverter
