IGW25N120H3FKSA1 Description
IGW25N120H3FKSA1 is a high-speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120. The Infineon IGW25N120H3FKSA1 can be applied in solar inverters, uninterruptible power supplies, welding converters, and converters with high switching frequency. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IGW25N120H3FKSA1 is in the PG-TO247-3 package with 326W power dissipation.
IGW25N120H3FKSA1 Features
TRENCHSTOPTM technology offering
best in class switching performance: less than 500μJ total switching losses achievable
very low VCEsat
low EMI
maximum junction temperature 175°C
qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
IGW25N120H3FKSA1 Applications
solar inverters
uninterruptible power supplies
welding converters
converters with the high switching frequency
