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FGH30N60LSDTU

FGH30N60LSDTU

FGH30N60LSDTU

ON Semiconductor

FGH30N60LSDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGH30N60LSDTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOW CONDUCTION LOSS
HTS Code8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation480W
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time18 ns
Power - Max 480W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 250 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 35 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage600V
Turn On Time62 ns
Test Condition 400V, 30A, 6.8 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.4V @ 15V, 30A
Turn Off Time-Nom (toff) 2870 ns
Gate Charge225nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 18ns/250ns
Switching Energy 1.1mJ (on), 21mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 2000ns
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1103 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.151920$5.15192
10$4.860302$48.60302
100$4.585190$458.519
500$4.325651$2162.8255
1000$4.080803$4080.803

FGH30N60LSDTU Product Details

FGH30N60LSDTU Description


The FGH30N60LSDTU is an IGBT using ON Semiconductor's planar technology.



FGH30N60LSDTU Features


  • Low saturation voltage: VCE(sat) =1.1V @ IC = 30A

  • High Input Impedance

  • Low Conduction Loss



FGH30N60LSDTU Applications


  • Energy Generation & Distribution


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