FGA60N65SMD Description
ON Semiconductor's new field stop 2nd generation IGBTs, which use revolutionary field stop IGBT technology, provide the best performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications that require low conduction and switching losses.
FGA60N65SMD Features
RoHS compliant
High current capability
Fast switching: EOFF =7.5uJ/A
Tightened parameter distribution
Maximum junction temperature : TJ =175 °C
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A
Positive temperature co-efficient for easy parallel operating
FGA60N65SMD Applications
