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FDZ1323NZ

FDZ1323NZ

FDZ1323NZ

ON Semiconductor

FDZ1323NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDZ1323NZ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-XFBGA, WLCSP
Number of Pins 6
Weight 50mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2011
Series PowerTrench®
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Max Power Dissipation2W
Terminal Position BOTTOM
Terminal FormBALL
Number of Elements 2
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time12 ns
Power - Max 500mW
FET Type 2 N-Channel (Dual) Common Drain
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2055pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time13ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 380 pF
Height 150μm
Length 2.3mm
Width 1.3mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:5586 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.271680$3.27168
10$3.086491$30.86491
100$2.911784$291.1784
500$2.746966$1373.483
1000$2.591477$2591.477

FDZ1323NZ Product Details

FDZ1323NZ Description


This particular device is intended to serve as a single package solution for ultra-portable applications such as Li-Ion battery pack protection circuits. The FDZ1323NZ reduces both PCB space and rs1S2(on)-resistance by utilizing two common drain N-channel MOSFETs, which enable bidirectional current flow, on Fairchild's innovative PowerTrench? process with cutting-edge "low pitch" WLCSP packaging method. This cutting-edge WLCSP MOSFET represents a development in packaging technique that makes it possible for the device to combine superior heat transfer properties, ultra-low profile packing, low gate charge, and low rSis2(on). -



FDZ1323NZ Features


  • only takes about 3 mm2 of PCB space.

  • When mounted to a PCB, an ultra-thin package has a height of less than 0.35 mm.

  • Ability to handle high power and current

  • 3.6 kV or above for HBM ESD protection (Note 3)

  • REACH Compliant



FDZ1323NZ Applications


  • Battery administration

  • Charge switch

  • Battery security


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