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SIZ730DT-T1-GE3

SIZ730DT-T1-GE3

SIZ730DT-T1-GE3

Vishay Siliconix

MOSFET 30V 16/35A 27/48W 9.3/3.9mohm @ 10V

SOT-23

SIZ730DT-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerPair™
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2014
Series TrenchFET®
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Max Power Dissipation48W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number SIZ730
Pin Count6
Number of Elements 2
Number of Channels 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Case Connection DRAIN SOURCE
Power - Max 27W 48W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A 35A
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time15ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0053Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 45 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 750μm
Length 6mm
Width 3.73mm
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9794 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.326324$3.326324
10$3.138042$31.38042
100$2.960417$296.0417
500$2.792846$1396.423
1000$2.634760$2634.76

About SIZ730DT-T1-GE3

The SIZ730DT-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 30V 16/35A 27/48W 9.3/3.9mohm @ 10V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIZ730DT-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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