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IXTA1R6N100D2HV

IXTA1R6N100D2HV

IXTA1R6N100D2HV

IXYS

MOSFET N-CH

SOT-23

IXTA1R6N100D2HV Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~150°C TJ
Part StatusActive
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 100W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10 Ω @ 800mA, 0V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 645pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.6A Tj
Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
FET Feature Depletion Mode
In-Stock:1715 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.691188$4.691188
10$4.425649$44.25649
100$4.175140$417.514
500$3.938812$1969.406
1000$3.715860$3715.86

About IXTA1R6N100D2HV

The IXTA1R6N100D2HV from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTA1R6N100D2HV, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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