FDS9953A Description
This P-channel MOSFET is a rugged gate version of advanced PowerTritch technology. It is optimized for power management applications that require a wide range of rated driving voltages (4.5V-25V).
FDS9953A Features
-2.9 A, -30 V
RDS(on) = 130 mΩ@ VGS = -10 V
RDS(on) = 200 mΩ @ VGS = -4.5 V
Low gate charge (2.5nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS9953A Applications
This product is general usage and suitable for many different applications.
Power Management
Load Switch
Battery Protection
