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EPC2106ENGRT

EPC2106ENGRT

EPC2106ENGRT

EPC

TRANS GAN 2N-CH 100V BUMPED DIE

SOT-23

EPC2106ENGRT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2015
Series eGaN®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -40°C
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id 2.5V @ 600μA
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V
Current - Continuous Drain (Id) @ 25°C 1.7A
Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V
Drain to Source Voltage (Vdss) 100V
Continuous Drain Current (ID) 1.7A
Input Capacitance75pF
FET Feature GaNFET (Gallium Nitride)
Rds On Max 70 mΩ
RoHS StatusROHS3 Compliant
In-Stock:1034 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About EPC2106ENGRT

The EPC2106ENGRT from EPC is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS GAN 2N-CH 100V BUMPED DIE.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the EPC2106ENGRT, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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