NVMFD5853NLT1G Description
A power MOSFET NVMFD5853NLT1G is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET?ˉs are constructed in a V configuration.
NVMFD5853NLT1G Features
? Small Footprint (5x6 mm) for Compact Designs
? Low RDS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? NVMFD5853NLWF ? Wettable Flanks Option for Enhanced Optical Inspection
? AEC?Q101 Qualified and PPAP Capable
? This is a Pb?Free Device
NVMFD5853NLT1G Applications
high-level powers
