FDS89161LZ Description
This N-channel logic level MOSFET is produced by Fairchild's advanced PowerTrenche process, which combines shielded gate technology. The process is optimized for the on-resistance, while still maintaining excellent switching performance. Gmurs Zener is added to improve the ESD voltage level.
FDS89161LZ Features
Shielded Gate MOSFET Technology
Max rps(on)=105mΩat VGs=10V，ID=2.7 A Maxrpsion)=160mΩatVGs=4.5V=2.1A
High performance trench technology for extremely low rps(on)
High power and current handling capability in a widely used surface mount package
ICDM ESD protection evel>2KV typical(Note 4)
100% UIL Tested
RoHS Compliant
FDS89161LZ Applications
Gmurs Zener
