Name: TC8020K6-G
Brand: Microchip Technology
SKU: TC8020K6-G
Price: 11.44000 USD
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	56-VFQFN Exposed Pad
Number of Pins	56
Weight	191.387631mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tray
Published	2012
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	56
ECCN Code	EAR99
Terminal Finish	NICKEL PALLADIUM GOLD
Terminal Position	QUAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Number of Elements	6
Configuration	COMPLEX
Number of Channels	12
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	10 ns
FET Type	6 N and 6 P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Rise Time	15ns
Drain to Source Voltage (Vdss)	200V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	15 ns
Turn-Off Delay Time	20 ns
Drain-source On Resistance-Max	8Ohm
Drain to Source Breakdown Voltage	-200V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

TC8020K6-G Product Details

TC8020K6-G Description

The Supertex TC8020 consists of six pairs of high voltage,low threshold N- and P-channel MOSFETs in a 56-lead QFNpackage. All MOSFETs have integrated gate-to-source resistorsand gate-to-source Zener diode clamps which are desired forhigh voltage pulser applications. The complimentary, high-speed,high voltage, gate-clamped N- and P-channel MOSFET pairsutilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combinationproduces a device with the power handling capabilities of bipolartransistors and with the high input impedance and positivetemperature coefficient inherent in MOS devices.