DN2625DK6-G Description
The DN2625DK6-G is a low-threshold Depletion-mode (normally-on) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this DN2625DK6-G is free from thermal runaway and thermally induced secondary breakdown.
DN2625DK6-G Features
Very Low Gate Threshold Voltage
Designed to be Source-driven
Low Switching Losses
Low Effective Output Capacitance
Designed for Inductive Loads
DN2625DK6-G Applications
Medical Ultrasound Beamforming
Ultrasonic Array-focusing Transmitter
Piezoelectric Transducer Waveform Drivers
High-speed Arbitrary Waveform Generator
Normally-on Switches
Solid-state Relays
Constant Current Sources
Power Supply Circuits
