Name: FDS8878
Brand: ON Semiconductor
SKU: FDS8878
Price: 0.21000 USD
Availability: InStock

new-10%

FDS8878

Manufacturer part number:FDS8878

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 14m Ω @ 10.2A, 10V ±20V 897pF @ 15V 26nC @ 10V 8-SOIC (0.154, 3.90mm Width)

Case Package:SOT-23

Datasheet:FDS8878 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Factory Lead Time	18 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
Published	2001
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	14MOhm
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	10.2A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 10.2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	897pF @ 15V
Current - Continuous Drain (Id) @ 25°C	10.2A Ta
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Rise Time	29ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	10.2A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	57 mJ
Nominal Vgs	2.5 V
Height	1.5mm
Length	5mm
Width	4mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDS8878 Product Details

FDS8878 Description

With either synchronous or traditional switching PWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. Low gate charge, low rDS(on), and quick switching speed have all been optimized for.