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FDS8842NZ

FDS8842NZ

FDS8842NZ

ON Semiconductor

N-Channel Tape & Reel (TR) 7m Ω @ 14.9A, 10V ±20V 3845pF @ 15V 73nC @ 10V 8-SOIC (0.154, 3.90mm Width)

SOT-23

FDS8842NZ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 9 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 130mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 7MOhm
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal FormGULL WING
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Turn On Delay Time13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 14.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3845pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14.9A Ta
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Rise Time7ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 14.9A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Feedback Cap-Max (Crss) 330 pF
Height 1.575mm
Length 4.9mm
Width 3.9mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3939 items

Pricing & Ordering

QuantityUnit PriceExt. Price

FDS8842NZ Product Details

FDS8842NZ Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3845pF @ 15V.This device conducts a continuous drain current (ID) of 14.9A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 34 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

FDS8842NZ Features


a continuous drain current (ID) of 14.9A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 34 ns


FDS8842NZ Applications


There are a lot of ON Semiconductor
FDS8842NZ applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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