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FDS6688

FDS6688

FDS6688

ON Semiconductor

FDS6688 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDS6688 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SOIC
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2004
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3888pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Gate Charge (Qg) (Max) @ Vgs 56nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
In-Stock:7497 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.687634$0.687634
10$0.648711$6.48711
100$0.611992$61.1992
500$0.577350$288.675
1000$0.544670$544.67

FDS6688 Product Details

FDS6688 Description


The FDS6688 is a 30v N-Channel PowerTrench? MOSFET. This N-Channel MOSFET FDS6688 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.



FDS6688 Features


  • 16A, 30V RDS(ON) = 6mΩ, @VGS = 10V

RDS(ON) = 7mΩ, @VGS = 4.5V

  • Ultra-low gate charge (40 nC typical)

  • High-performance trench technology for extremely low RDS(ON)

  • High power and current handling capability



FDS6688 Applications


  • Cellular phones

  • Laptop computers

  • Photovoltaic systems

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator


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