Name: BSC123N08NS3GATMA1
Brand: Infineon Technologies
SKU: BSC123N08NS3GATMA1
Price: 1.85000 USD
Availability: InStock

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BSC123N08NS3GATMA1

Manufacturer part number:BSC123N08NS3GATMA1

Manufacturer:Infineon Technologies

Description:BSC123N08NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSC123N08NS3GATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 66W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	66W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.3m Ω @ 33A, 10V
Vgs(th) (Max) @ Id	3.5V @ 33μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1870pF @ 40V
Current - Continuous Drain (Id) @ 25°C	11A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	18ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	80V
Drain Current-Max (Abs) (ID)	55A
Pulsed Drain Current-Max (IDM)	220A
Avalanche Energy Rating (Eas)	70 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

BSC123N08NS3GATMA1 Product Details

BSC123N08NS3GATMA1 Description

BSC123N08NS3GATMA1 belongs to the family of OptiMOSTM3 power MOSFETs manufactured by Infineon Technologies for high-frequency switching and synchronous rectification. It provides superior thermal resistance, advanced switching performance, and low gate charge. Based on its specific features, it is able to be used in a wide range of applications.