Name: FDN337N
Brand: ON Semiconductor
SKU: FDN337N
Price: 0.51000 USD
Availability: InStock

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FDN337N

Manufacturer part number:FDN337N

Manufacturer:ON Semiconductor

Description:FDN337N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDN337N Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1998
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	65mOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	2.2A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Turn On Delay Time	4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.2A Ta
Gate Charge (Qg) (Max) @ Vgs	9nC @ 4.5V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	2.2A
Threshold Voltage	700mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	2A
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	700 mV
Height	1.12mm
Length	2.92mm
Width	3.05mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDN337N Product Details

FDN337N Description

FDN337N N-Channel MOSFET was created with a distinctive technology that provides the most efficient RDS(on). FDN337N MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDN337N ON Semiconductor is a general-purpose device and can be used in a variety of applications.