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IMZ120R030M1HXKSA1

IMZ120R030M1HXKSA1

IMZ120R030M1HXKSA1

Infineon Technologies

SiCFET (Silicon Carbide) N-Channel 40m Ω @ 25A, 18V +23V, -7V 2.12nF @ 800V 63nC @ 18V 1.2kV TO-247-4

SOT-23

IMZ120R030M1HXKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-247-4
Operating Temperature-55°C~175°C TJ
Series CoolSiC™
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 227W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 25A, 18V
Vgs(th) (Max) @ Id 5.7V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 2.12nF @ 800V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 18V
Drain to Source Voltage (Vdss) 1.2kV
Drive Voltage (Max Rds On,Min Rds On) 15V 18V
Vgs (Max) +23V, -7V
RoHS StatusROHS3 Compliant
In-Stock:290 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$30.40000$30.4
500$30.096$15048
1000$29.792$29792
1500$29.488$44232
2000$29.184$58368
2500$28.88$72200

IMZ120R030M1HXKSA1 Product Details

IMZ120R030M1HXKSA1 Description

IMZ120R030M1HXKSA1 SiC MOSFET is a type of Power MOSFET that is build on a trench semiconductor process optimized to combine performance with reliability. IMZ120R030M1HXKSA1 MOSFET is ideal for low frequency applications requiring performance and ruggedness. Infineon Technologies IMZ120R030M1HXKSA1 is general use and is suitable for bi-directional topologies, power factor correction circuits, and DC-AC inverters or DC-DC converters.

IMZ120R030M1HXKSA1 Features

Reduced system complexity

Reduced cooling effort

Highest efficiency

Increased power density

Higher frequency operation

IMZ120R030M1HXKSA1 Applications

DC-AC inverters

Bi-directional topologies

Power factor correction circuits

DC-DC converters


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