FDS6675A

FDS6675A Description

FDS6675A is a 30v P-Channel PowerTrench? MOSFET. This P-Channel MOSFET FDS6675A is a rugged gate version of Fairchild Semiconductor?ˉs advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V ¨C 25V). The Operating and Storage Temperature Range is between -55 and 175??. And the MOSFET FDS6675A is in the SOIC-8 package with 2.5W power dissipation.

FDS6675A Features

• ¨C11 A, ¨C30 V.RDS(ON) = 13m? @ VGS = ¨C10 V

RDS(ON) = 19m? @ VGS = ¨C 4.5 V

• Low gate charge

• Fast switching speed

• High-performance trench technology for extremely low RoqON)

• High power and current handling capability

FDS6675A Applications

• Power management

• Load switch

• Battery protection

• Induction furnaces

• Arc furnaces and arc welders

• Steel rolling mills

• Large motors with periodic loading

• Thyristor drives