Name: FDS4465
Brand: ON Semiconductor
SKU: FDS4465
Price: 1.53000 USD
Availability: InStock

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FDS4465

Manufacturer part number:FDS4465

Manufacturer:ON Semiconductor

Description:FDS4465 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDS4465 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	8.5MOhm
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-13.5A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	20 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5m Ω @ 13.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8237pF @ 10V
Current - Continuous Drain (Id) @ 25°C	13.5A Ta
Gate Charge (Qg) (Max) @ Vgs	120nC @ 4.5V
Rise Time	24ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	140 ns
Turn-Off Delay Time	300 ns
Continuous Drain Current (ID)	13.5A
Threshold Voltage	-600mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	50A
Dual Supply Voltage	-20V
Max Junction Temperature (Tj)	175°C
Nominal Vgs	-600 mV
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDS4465 Product Details

FDS4465 Description

FDS4465 is a type of P-channel PowerTrench? MOSFET that is manufactured by ON Semiconductor based on the high-performance trench technology for extremely low RDS (on). It features a low gate charge, fast switching speed, as well as high current and power handling capability. Power MOSFET FDS4465 is primarily designed for power management applications with a wide range of gate drive voltage (1.8 V – 8 V).