Name: FDPF5N50FT
Brand: ON Semiconductor
SKU: FDPF5N50FT
Price: 1.77000 USD
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Factory Lead Time	4 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	UniFET™
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	28W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	28W
Case Connection	ISOLATED
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.55 Ω @ 2.25A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.5A Tc
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	4.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Height	16.07mm
Length	10.36mm
Width	4.9mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

FDPF5N50FT Product Details

FDPF5N50FT Description

A high voltage MOSFET family called UniFETTM MOSFET is based on DMOS and planar stripe technology. FDPF5N50FT MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. The lifetime control of UniFET FRFET? MOSFET has improved the reverse recovery performance of the body diode. While most planar MOSFETs have a trr of over 200ns and a reverse dv/dt immunity of 4.5V/ns, this device has a trr of less than 100ns. Therefore, in certain applications where the performance of the MOSFET's body diode is critical, it can eliminate an additional component and increase system reliability. For switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.