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CSD19502Q5B

  • CSD19502Q5B - CSD19502Q5B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
  • CSD19502Q5B - CSD19502Q5B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

CSD19502Q5B

CSD19502Q5B

Texas Instruments

CSD19502Q5B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

SOT-23

CSD19502Q5B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD19502
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 195W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation3.2W
Case Connection DRAIN
Turn On Delay Time8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.1m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 3.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4870pF @ 40V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Rise Time6ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 2.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 274 mJ
Feedback Cap-Max (Crss) 22 pF
Length 5mm
Width 6mm
Thickness 950μm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:3119 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.78000$2.78
500$2.7522$1376.1
1000$2.7244$2724.4
1500$2.6966$4044.9
2000$2.6688$5337.6
2500$2.641$6602.5

CSD19502Q5B Product Details

CSD19502Q5B Description


CSD19502Q5B belongs to the family of N-Channel NexFET? power MOSFETs that are primarily designed to minimize losses in power conversion applications. It is widely used for motor control, power over ethernet (PoE), and power sourcing equipment (PSE) due to its high quality and reliable performance.



CSD19502Q5B Features


  • Ultra-low Qg and Qgd

  • Low thermal resistance

  • Power dissipation of 2.5 W

  • Available in the SON 2-mm × 2-mm plastic package



CSD19502Q5B Applications


  • Motor control

  • Power over Ethernet (PoE)

  • Power sourcing equipment (PSE)


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