Name: STFW3N150
Brand: STMicroelectronics
SKU: STFW3N150
Price: 5.18000 USD
Availability: InStock

new-10%

STFW3N150

Manufacturer part number:STFW3N150

Manufacturer:STMicroelectronics

Description:STFW3N150 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STFW3N150 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOWATT218FX
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	9Ohm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STFW
Pin Count	3
Number of Elements	1
Power Dissipation-Max	63W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	63W
Case Connection	ISOLATED
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9 Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	939pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.5A Tc
Gate Charge (Qg) (Max) @ Vgs	29.3nC @ 10V
Rise Time	47ns
Drain to Source Voltage (Vdss)	1500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	61 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	2.5A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	1.5kV
Avalanche Energy Rating (Eas)	450 mJ
Height	26.7mm
Length	15.7mm
Width	5.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STFW3N150 Product Details

STFW3N150 Description

STFW3N150 is a type of PowerMESH power MOSFET developed by STMicroelectronics. It is designed utilizing the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. It can be found in the TO-3PF, H2PAK-2, TO-220, or TO247 packages with the purpose of saving board space. Based on its 100% avalanche tested, intrinsic capacitances and Qg minimized, and high-speed switching, STFW3N150 power MOSFET is well suited for various applications.