SCTW40N120G2VAG Description
This silicon carbide power MOSFET device is developed using advanced and innovative second generation silicon carbide MOSFET technology from STMicroelectronics. The device has extremely low on-resistance per unit area and very good switching performance. The change of switching loss has almost nothing to do with the junction temperature.
SCTW40N120G2VAG Features
? AEC-Q101 qualified
? Very fast and robust intrinsic body diode
? Extremely low gate charge and input capacitance
? Very high operating junction temperature capability (TJ = 200 °C)
SCTW40N120G2VAG Applications
? Main inverter (electric traction)
? DC/DC converter for EV/HEV
? On board charger (OBC)
