Name: FDB120N10
Brand: ON Semiconductor
SKU: FDB120N10
Price: 3.14000 USD
Availability: InStock

new-10%

FDB120N10

Manufacturer part number:FDB120N10

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 100V 74A 3-Pin(2+Tab) TO-263 T/R

Case Package:SOT-23

Datasheet:FDB120N10 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	170W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	170W
Case Connection	DRAIN
Turn On Delay Time	27 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12m Ω @ 74A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5605pF @ 25V
Current - Continuous Drain (Id) @ 25°C	74A Tc
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Rise Time	105ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	39 ns
Continuous Drain Current (ID)	74A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	296A
Height	4.83mm
Length	10.67mm
Width	9.65mm
RoHS Status	ROHS3 Compliant

About FDB120N10

The FDB120N10 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 100V 74A 3-Pin(2+Tab) TO-263 T/R.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDB120N10, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.