Name: FDP5N50
Brand: ON Semiconductor
SKU: FDP5N50
Price: 0.53000 USD
Availability: InStock

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FDP5N50

Manufacturer part number:FDP5N50

Manufacturer:ON Semiconductor

Description:FDP5N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDP5N50 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	UniFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	85W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	85W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.4 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
RoHS Status	RoHS Compliant

FDP5N50 Product Details

FDP5N50 Description

These N-channel enhanced power field effect transistorsFDP5N50 are produced using Fairchild's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are very suitable for efficient switching mode power supply and active power factor correction.