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FQI12N60CTU

FQI12N60CTU

FQI12N60CTU

ON Semiconductor

Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) I2PAK Rail

SOT-23

FQI12N60CTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2007
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.13W Ta 225W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:7113 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.500023$6.500023
10$6.132097$61.32097
100$5.784997$578.4997
500$5.457545$2728.7725
1000$5.148627$5148.627

About FQI12N60CTU

The FQI12N60CTU from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) I2PAK Rail.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQI12N60CTU, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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