STT4P3LLH6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STT4P3LLH6 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Series
DeepGATE™, STripFET™ H6
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STT4P
Configuration
Single
Power Dissipation-Max
1.6W Ta
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
56m Ω @ 2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
639pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4A Ta
Gate Charge (Qg) (Max) @ Vgs
6nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
4A
Drain Current-Max (Abs) (ID)
4A
RoHS Status
ROHS3 Compliant
In-Stock:11806 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STT4P3LLH6 Product Details
STT4P3LLH6 Description
STT4P3LLH6 is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. STT4P3LLH6 is packaged in the SOT-23-6 package and is capable of supplying 4A of continuous drain current. This P-channel Power MOSFET has an operating temperature range of -55°C to 150°C.? STT4P3LLH6 Features
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss STT4P3LLH6 Applications
Switching applications New energy vehicles photovoltaic & wind power generation smart grid
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