Name: FDP12N50NZ
Brand: ON Semiconductor
SKU: FDP12N50NZ
Price: 1.92000 USD
Availability: InStock

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FDP12N50NZ

Manufacturer part number:FDP12N50NZ

Manufacturer:ON Semiconductor

Description:FDP12N50NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDP12N50NZ Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	UniFET-II™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	170W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	170W
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	520m Ω @ 5.75A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1235pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11.5A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	50ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	11.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.52Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	46A
Avalanche Energy Rating (Eas)	560 mJ
Height	16.07mm
Length	10.36mm
Width	4.9mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

FDP12N50NZ Product Details

FDP12N50NZ Description

UniFETMII MOSFET is a series of high voltage MOSFET products of Fairchild, which is based on advanced planar stripe and DMOS technology. This advanced MOSFET series has the lowest on-resistance in planar MOSFET, as well as superior switching performance and higher avalanche energy intensity. Besides. Internal gate source ESD diodes allow UniFET II MOSFET to withstand surging pressures exceeding 2KV HBM. The device family is suitable for switching power supply inverter applications such as power factor correction (PFC), flat panel display (FPD), TV power supply ATX and electronic lamp ballast.