Name: AUIRFR6215
Brand: Infineon Technologies
SKU: AUIRFR6215
Price: 3.43000 USD
Availability: InStock

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AUIRFR6215

Manufacturer part number:AUIRFR6215

Manufacturer:Infineon Technologies

Description:AUIRFR6215 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRFR6215 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	110W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	295m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	860pF @ 25V
Current - Continuous Drain (Id) @ 25°C	13A Tc
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-252AA
Drain Current-Max (Abs) (ID)	13A
Drain-source On Resistance-Max	0.295Ohm
Pulsed Drain Current-Max (IDM)	44A
DS Breakdown Voltage-Min	150V
Avalanche Energy Rating (Eas)	310 mJ
RoHS Status	ROHS3 Compliant

AUIRFR6215 Product Details

AUIRFR6215 Description

AUIRFR6215, developed by Infineon Technologies, is a type of HEXFET? power MOSFET specifically designed for automotive applications. Low on-resistance per silicon area can be realized based on advanced processing techniques. High flexibility and reliability can be ensured based on its fast switching speed, ruggedized device design, and logic-level gate drive. As a result, AUIRFR6215 is extremely efficient for electronic designers to use in a wide range of applications.