Name: IPD65R660CFDAATMA1
Brand: Infineon Technologies
SKU: IPD65R660CFDAATMA1
Price: 2.71000 USD
Availability: InStock

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IPD65R660CFDAATMA1

Manufacturer part number:IPD65R660CFDAATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 650V 6A 3-Pin TO-252 T/R

Case Package:SOT-23

Datasheet:IPD65R660CFDAATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	Automotive, AEC-Q101, CoolMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	62.5W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	660m Ω @ 3.22A, 10V
Vgs(th) (Max) @ Id	4.5V @ 214.55μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	543pF @ 100V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	6A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.66Ohm
Pulsed Drain Current-Max (IDM)	17A
Avalanche Energy Rating (Eas)	115 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

About IPD65R660CFDAATMA1

The IPD65R660CFDAATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 650V 6A 3-Pin TO-252 T/R.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPD65R660CFDAATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.