FDS86141 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDS86141 Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
9 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
5W
Turn On Delay Time
8.3 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
23m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
934pF @ 50V
Current - Continuous Drain (Id) @ 25°C
7A Ta
Gate Charge (Qg) (Max) @ Vgs
16.5nC @ 10V
Rise Time
3.2ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
3.2 ns
Turn-Off Delay Time
14.3 ns
Continuous Drain Current (ID)
7A
Threshold Voltage
3.1V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
7A
Drain-source On Resistance-Max
0.023Ohm
Drain to Source Breakdown Voltage
100V
Nominal Vgs
3.1 V
Height
1.5mm
Length
4mm
Width
5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2985 items
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FDS86141 Product Details
FDS86141 Description
FDS86141 is a 100V N-Channel Power Trench? MOSFET. This N-channel MOSFET FDS86141 is produced using an advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDS86141 is in the SOIC-8 package with 5W power dissipation.
FDS86141 Features
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A
High Performance Trench Technology for Extremely Low rDS(on)
100% UIL Tested
RoHS Compliant
FDS86141 Applications
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator
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