FDMS8D8N15C Description
With a voltage of 30V, the FDMS8D8N15C is an N-channel Power MOSFET from ON Semiconductor. The FDMS8D8N15C has an operating temperature of -55°C to 150°C TJ and maximum power dissipation of 132W Tc. ON Semiconductor's innovative Power Trench process, which includes Shielded Gate technology, is used to make this N-Channel MV MOSFET. With the best-in-class soft body diode, this method has been designed to minimize on-state resistance while maintaining exceptional switching performance.
FDMS8D8N15C Features
Shielded Gate MOSFET Technology
Max rDS(on) = 8.8 m at VGS = 10 V, ID = 45 A
Max rDS(on) = 9.4 m at VGS = 8 V, ID = 22.5 A
Low Qrr, Soft Recovery Body Diode
Lowers Switching Noise/EMI
MSL1 Robust Package Design
100% UIL Tested
These Devices are Pb?Free and are RoHS Compliant
FDMS8D8N15C Applications
