STF3NK80Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STF3NK80Z Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
4.5Ohm
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
800V
Technology
MOSFET (Metal Oxide)
Current Rating
2.5A
Base Part Number
STF3N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
25W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
25W
Case Connection
ISOLATED
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.5 Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
485pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.5A Tc
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Rise Time
27ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
36 ns
Continuous Drain Current (ID)
2.5A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
800V
Height
9.3mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:3673 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.77000
$1.77
50
$1.43160
$71.58
100
$1.26310
$126.31
500
$0.99818
$499.09
STF3NK80Z Product Details
STF3NK80Z Description
The STF3NK80Z is a Zener-protected N-channel Power MOSFET with low gate charge. ST's well-known strip-based PowerMESHTM pattern is transformed into the SuperMESHTM. Aside from lowering ON-resistance, extra care is made to ensure that the most demanding applications have excellent dV/dt capacity. This MOSFET is part of ST's complete line of high-voltage MOSFETs, which includes the ground-breaking MDmeshTM devices.
