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2SK2009TE85LF

2SK2009TE85LF

2SK2009TE85LF

Toshiba Semiconductor and Storage

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2 Ω @ 50MA, 2.5V ±20V 70pF @ 3V 30V TO-236-3, SC-59, SOT-23-3

SOT-23

2SK2009TE85LF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 52 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature150°C TJ
PackagingCut Tape (CT)
Published 2009
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Configuration Single
Power Dissipation-Max 200mW Ta
Operating ModeENHANCEMENT MODE
Turn On Delay Time60 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2 Ω @ 50MA, 2.5V
Vgs(th) (Max) @ Id 1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 3V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V
Vgs (Max) ±20V
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
RoHS StatusRoHS Compliant
In-Stock:15267 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.151551$0.151551
10$0.142973$1.42973
100$0.134880$13.488
500$0.127245$63.6225
1000$0.120042$120.042

2SK2009TE85LF Product Details

2SK2009TE85LF Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 70pF @ 3V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 200mA.0.2A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 120 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 60 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (2.5V) reduces this device's overall power consumption.

2SK2009TE85LF Features


a continuous drain current (ID) of 200mA
the turn-off delay time is 120 ns
a 30V drain to source voltage (Vdss)


2SK2009TE85LF Applications


There are a lot of Toshiba Semiconductor and Storage
2SK2009TE85LF applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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