FDMS8692 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDMS8692 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
68.1mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Power Dissipation-Max
2.5W Ta 41W Tc
Element Configuration
Single
Power Dissipation
2.5W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9m Ω @ 12A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1265pF @ 15V
Current - Continuous Drain (Id) @ 25°C
12A Ta 28A Tc
Gate Charge (Qg) (Max) @ Vgs
21nC @ 10V
Rise Time
3ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
2 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
12A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:14599 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.46000
$0.46
500
$0.4554
$227.7
1000
$0.4508
$450.8
1500
$0.4462
$669.3
2000
$0.4416
$883.2
2500
$0.437
$1092.5
FDMS8692 Product Details
FDMS8692 Description
FDMS8692 is an N-channel Power Trench? MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 30V. The operating temperature of the FDMS8692 is -55??C~150??C TJ and its maximum power dissipation is 2.5W. The FDMS8692 has been created to reduce losses in applications involving power conversion. The lowest rDS(on) with excellent switching performance has been achieved by combining improvements in silicon and package technologies.
FDMS8692 Features
Max rDS(on) = 9.0m:at VGS = 10V, ID = 12A
Max rDS(on) = 14.0m: at VGS = 4.5V, ID = 10.5A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
RoHS Compliant
FDMS8692 Applications
Low Side for Synchronous Buck to Power Core Processor
Secondary Side Synchronous Rectifier
Low Side Switch in POL DC/DC Converter
Oring FET/ Load Switch
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