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IXTF6N200P3

IXTF6N200P3

IXTF6N200P3

IXYS

MOSFET N-CH

SOT-23

IXTF6N200P3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mounting Type Through Hole
Package / Case ISOPLUSi5-Pak™
Operating Temperature-55°C~150°C TJ
PackagingTube
Series Polar™
Part StatusActive
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 215W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.2 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V
Drain to Source Voltage (Vdss) 2000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:228 items

Pricing & Ordering

QuantityUnit PriceExt. Price
25$21.59000$539.75

About IXTF6N200P3

The IXTF6N200P3 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTF6N200P3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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