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IXTT38N30L2HV

IXTT38N30L2HV

IXTT38N30L2HV

IXYS

DISC MOSFET N-CH LINEAR L2 TO-26

SOT-23

IXTT38N30L2HV Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Operating Temperature-55°C~150°C TJ
Part StatusActive
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 400W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 38A Tc
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:383 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$19.78000$19.78
500$19.5822$9791.1
1000$19.3844$19384.4
1500$19.1866$28779.9
2000$18.9888$37977.6
2500$18.791$46977.5

About IXTT38N30L2HV

The IXTT38N30L2HV from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features DISC MOSFET N-CH LINEAR L2 TO-26.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTT38N30L2HV, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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